Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy
Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy
复制标题
DOI：
10.1002/pssc.200461386
复制
发表时间：
2005-05
期刊：
影响因子：
--
通讯作者：
H. Yaguchi;Y. Kitamura;K. Nishida;Y. Iwahashi;Y. Hijikata;S. Yoshida
中科院分区：
文献类型：
--
作者：
H. Yaguchi;Y. Kitamura;K. Nishida;Y. Iwahashi;Y. Hijikata;S. Yoshida
考虑到h-InN（10-10）与3C-SiC（110）晶格之间存在较小的不匹配，我们利用RF-N2等离子体分子束外延在3C-SiC（001）衬底上生长了六方InN （h-InN）薄膜。x射线衍射（XRD）结果表明，h-InN以h-InN (0001) || 3C-SiC（001）和h-InN (1-100) || 3C-SiC（110）生长。XRD测试还表明，在3C-SiC（001）上生长的h-InN外延层是由单畴组成的。在0.69 eV左右，可以清楚地观察到h-InN发出强烈而尖锐的光致发光。（©2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim）
We have grown hexagonal InN (h-InN) films on 3C-SiC (001) substrates by RF-N2 plasma molecular beam epitaxy taking account of small lattice mismatch between h-InN (10-10) and 3C-SiC (110). It was found from X-ray diffraction (XRD) measurements that h-InN grows with h-InN (0001) || 3C-SiC (001) and h-InN (1-100) || 3C-SiC (110). XRD measurements also revealed that the h-InN epitaxial layers grown on 3C-SiC (001) are composed of single domain. Strong and sharp photoluminescence from the h-InN was clearly observed at around 0.69 eV. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)