Synthesis of very narrow multilayer graphene nanoribbon with turbostratic stacking

Synthesis of very narrow multilayer graphene nanoribbon with turbostratic stacking
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DOI:
10.1063/1.4983349
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发表时间:
2017-05
影响因子:
4
通讯作者:
R. Negishi;Kaoru Yamamoto;H. Kitakawa;Minoru Fukumori;Hirofumi Tanaka;T. Ogawa;Yoshihiro Kobayashi
R. Negishi;Kaoru Yamamoto;H. Kitakawa;Minoru Fukumori;Hirofumi Tanaka;T. Ogawa;Yoshihiro Kobayashi
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
R. Negishi;Kaoru Yamamoto;H. Kitakawa;Minoru Fukumori;Hirofumi Tanaka;T. Ogawa;Yoshihiro Kobayashi

文献摘要

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通过在石墨烯纳米颗粒(GNR)模板上叠加生长石墨烯,制备了宽度小于20 nm的多层GNR。首先,通过从双壁碳纳米管解链制备宽度约为10 nm的非常窄的模板GNRs。然后通过化学气相沉积在原始GNR模板上形成另外的4-5层石墨烯。拉曼光谱显示,所合成的多层GNR具有乱层堆积,石墨烯层之间没有任何结构相关性。在使用合成的多层GNR沟道制造的场效应晶体管中观察到大的开/关比和高的导通电流。
A multilayer graphene nanoribbon (GNR) less than 20 nm wide was synthesized by overlayer growth of graphene on a GNR template. First, very narrow template GNRs with widths of approximately 10 nm were prepared by unzipping from double-walled carbon nanotubes. Additional 4–5 layers of graphene were then formed on the pristine GNR template by chemical vapor deposition. Raman spectroscopy revealed that the synthesized multilayer GNR had turbostratic stacking without any structural correlation between the graphene layers. A large on/off ratio and a high on-current were observed in field effect transistors fabricated using the synthesized multilayer GNR channel.