Study on the Resistance Drift in Amorphous Ge2Sb2Te5 According to Defect Annihilation and Stress Relaxation
Study on the Resistance Drift in Amorphous Ge2Sb2Te5 According to Defect Annihilation and Stress Relaxation
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DOI：
10.1149/2.001204esl
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发表时间：
2012-01-01
影响因子：
--
通讯作者：
Jooz, Young-Chang
中科院分区：
文献类型：
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作者：
Cho, Ju-Young;Yang, Tae-Youl;Jooz, Young-Chang
硫系玻璃中电阻随时间的漂移导致相变随机存储器（PCRAM）的不稳定性。为了揭示电阻漂移的起源，机械应力松弛和电阻测量进行非晶Ge 2Sb 2 Te 5薄膜在相同的样品条件下。电阻漂移遵循幂律与时间的关系，这是从应力松弛观察到的趋势不同。已经提出的模型，使时间依赖性的电阻从应力松弛计算和计算的电阻进行了比较，测量的电阻。我们的结果表明，缺陷湮没成功地解释了漂移现象。(C)2012年电化学学会。[DOI：10.1149/2.001204esl]保留所有权利。
Time-dependent drift of resistance in chalcogenide glasses leads to instabilities in phase-change random access memory (PCRAM). To reveal the origin of the resistance drift, mechanical stress relaxation and electrical resistance measurements were conducted on amorphous Ge2Sb2Te5 thin films under the same sample conditions. Resistance drift follows a power-law relationship with time, which is different from the trend observed for stress relaxation. The models that enable the time-dependence of resistance to be calculated from stress relaxation have been proposed and the calculated resistances were compared to the measured resistance. Our results show that the defect annihilation explains the drift phenomena successfully. (C) 2012 The Electrochemical Society. [DOI:10.1149/2.001204esl] All rights reserved.