Ferromagnetism in Co-doped indium–tin oxide films
Ferromagnetism in Co-doped indium–tin oxide films
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DOI：
10.1016/j.jmmm.2006.10.1015
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发表时间：
2007-03
影响因子：
2.7
通讯作者：
J. Stankiewicz;F. Villuendas;J. Bartolomé;J. Sesé
中科院分区：
文献类型：
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作者：
J. Stankiewicz;F. Villuendas;J. Bartolomé;J. Sesé
采用磁控溅射法在熔融石英衬底上制备了不同工艺条件下的共掺杂氧化铟锡（ITO）薄膜。我们发现，生长后的处理的薄膜的电子和磁性的影响至关重要。Co含量为30at%的薄膜在室温下表现出滞后磁化和反常霍尔效应。在这些薄膜中获得的饱和磁矩值高达1.6μ B/Co原子。在均匀的ITO：Co基质内具有富Co ITO或Co金属纳米团簇的混合磁性状态可能会引起这种行为。
Co-doped indium–tin oxide (ITO) films were produced by magnetron sputtering on fused quartz substrates under various conditions. We find that post-growth processing of films affects crucially their electronic and magnetic properties. Films with 30at% of Co show hysteretic magnetization and anomalous Hall effect up to room temperature. Values of up to 1.6μBper Co atom are obtained for the saturation magnetic moment in these films. A mixed magnetic state with Co-rich ITO or Co-metal nanoclusters within a homogeneous ITO:Co matrix might give rise to such behavior.