Giant improvement in the rectifying performance of oxidized Schottky contacts to ZnO
Giant improvement in the rectifying performance of oxidized Schottky contacts to ZnO
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DOI：
10.1063/1.4973487
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发表时间：
2017-01-14
影响因子：
3.2
通讯作者：
Allen, M. W.
中科院分区：
文献类型：
--
作者：
Hyland, A. M.;Makin, R. A.;Allen, M. W.
ZnO(0001) 表面上的铂、钯和铱肖特基接触的整流性能通过在制造过程中使用 O-2:Ar 射频等离子体进行有意的原位氧化而得到显着改善。例如，与未氧化触点的欧姆行为（即零整流/势垒高度）相比，氧化 Pt 肖特基触点表现出 12 个数量级的电流整流、高达 1.30 eV 的有效势垒高度以及在 180 摄氏度下稳定的高温操作。与普通金属触点相比，氧化 Pd 和 Ir 肖特基触点也显示出类似的显着改进。这些非常大的性能提升归因于肖特基接触形成过程中活性氧物质的存在，它产生了以下有益效果：（1）去除羟基诱导的表面势阱和相关的电子积累层，（2）界面氧空位的钝化，以及（3）氧化肖特基接触的功函数和电负性增加。由 AIP 出版社出版。
The rectifying performance of platinum, palladium, and iridium Schottky contacts on ZnO(0001) surfaces was dramatically improved by their deliberate in-situ oxidation using an O-2:Ar rf plasma during fabrication. For example, oxidized Pt Schottky contacts exhibited current rectification of 12 orders-of-magnitude, effective barrier heights of up to 1.30 eV, and stable high-temperature operation at 180 degrees C, compared to the ohmic behavior (i.e., zero rectification/barrier height) of unoxidized contacts. Oxidized Pd and Ir Schottky contacts also showed similar dramatic improvements compared to their plain metal counterparts. These very large performance gains are attributed to the presence of active oxygen species during Schottky contact formation that produces the following beneficial effects: (1) the removal of the hydroxyl-induced surface potential well and associated electron accumulation layer, (2) the passivation of interfacial oxygen vacancies, and (3) an increase in the work function and electronegativity of the oxidized Schottky contacts. Published by AIP Publishing.