Room temperature performance of mid-wavelength infrared InAsSb nBn detectors
Room temperature performance of mid-wavelength infrared InAsSb nBn detectors
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DOI：
10.1117/12.2075771
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发表时间：
2014-07
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影响因子：
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通讯作者：
A. Soibel;C. Hill;S. Keo;L. Hoglund;D. Ting;S. Gunapala
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文献类型：
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作者：
A. Soibel;C. Hill;S. Keo;L. Hoglund;D. Ting;S. Gunapala
本文研究了截止波长在4.5μm附近的中波红外InAsSb-AlAsSb NbN探测器的高温性能，在77-325K的温度范围内，这种器件的量子效率为35%，并且不随温度变化，显示了室温工作的潜力。器件暗电流在150K-325K温度范围内保持扩散受限，并在较低温度下以生成-复合过程为主。在T=300K时，D*(λ)=1×109(cm Hz0.5/W)，在T=250K时，D*(λ)=5×109(cm Hz0.5/W)，这是用一级TE冷却器很容易实现的。
In this work we investigate the high temperature performance of mid-wavelength infrared InAsSb-AlAsSb nBn detectors with cut-off wavelengths near 4.5μm. The quantum efficiency of these devices is 35% without antireflection coatings and does not change with temperature in the 77 - 325K temperature range, indicating potential for room temperature operation. The device dark current stays diffusion limited in the 150K-325K temperature range and becomes dominated by generation-recombination processes at lower temperatures. Detector detectivities of D*(λ) = 1x109 (cm Hz0.5/W) at T = 300K and D*(λ) = 5x109 (cm Hz0.5/W) at T = 250K, which is easily achievable with a one stage TE cooler.