Low-temperature growth of gallium nitride films by inductively coupled-plasma-enhanced reactive magnetron sputtering
Low-temperature growth of gallium nitride films by inductively coupled-plasma-enhanced reactive magnetron sputtering
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DOI：
10.1116/1.4871472
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发表时间：
2014-04
期刊：
影响因子：
--
通讯作者：
C. Ni;F. Hong
中科院分区：
文献类型：
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作者：
C. Ni;F. Hong
采用反应磁控溅射技术在蓝宝石衬底上生长了氮化镓薄膜。在衬底支架和溅射靶之间安装电感耦合等离子体源，以提高等离子体密度和氮气的电离度。溅射气体分别为液态Ga和液态Ar/N2。x射线衍射测量证实，作者可以在500°C下生长出高质量的GaN晶体。然而，即使将生长温度降低到300°C，晶体GaN（0002）峰仍然存在。在500℃下生长的膜的N:Ga比接近1:1，且随着生长温度的升高，氮成分逐渐向1:1的N:Ga比升高。ICP源诱导的高电离度是生长高结晶质量氮化镓薄膜的必要条件。
Gallium nitride (GaN) films were grown on sapphire substrate by reactive magnetron sputtering. Inductively coupled-plasma (ICP) source was installed between the substrate holder and the sputtering target to increase the plasma density and the degree of ionization of nitrogen gas. Liquid Ga and Ar/N2 were used as the sputtering target and sputtering gases, respectively. X-ray diffraction measurements confirmed that the authors could grow high quality GaN crystallites at 500 °C. However, the crystalline GaN (0002) peak remained even by lowering the growth temperature down to 300 °C. The N:Ga ratio of the film grown at 500 °C was almost 1:1, and the nitrogen composition became higher toward the 1:1 N:Ga ratio with increasing the growth temperature. The high degree of ionization induced by ICP source was essential to the growth of high crystalline quality GaN films.