Effect of deposition atmosphere on the phase composition and microstructure of silicon carbide films prepared by laser chemical vapour deposition
Effect of deposition atmosphere on the phase composition and microstructure of silicon carbide films prepared by laser chemical vapour deposition
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DOI：
10.1016/j.ceramint.2015.01.142
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发表时间：
2015-06-01
影响因子：
5.2
通讯作者：
Goto, Takashi
中科院分区：
文献类型：
--
作者：
Hashimoto, Ryuma;Ito, Akihiko;Goto, Takashi
采用Nd：YAG激光器在H2或Ar气氛中进行激光化学气相沉积，制备了β-SiC薄膜。研究了沉积气氛对薄膜相组成和显微结构的影响。在1273-1473 K的H2气氛中，生长出了由亚微米晶粒组成的（111）取向的β-SiC薄膜，而在1573-1673 K生长的β-SiC薄膜中共沉积了碳。在Ar气氛下，在1073-1373 K生长了非晶Si-C-O薄膜，而在1473-1723 K生长了不含游离碳的（111）取向β-SiC薄膜。（111）取向β-SiC薄膜的沉积速率为1500-2000 μ m·h ~（-1）。(C)2015 Elsevier Ltd和Techna Group S.r.l. All rights reserved.
beta-SiC films were prepared by laser chemical vapour deposition using a Nd:YAG laser in a H-2 or Ar atmosphere. The effects of the deposition atmosphere on the film phase composition and microstructure were investigated. In a H-2 atmosphere, (111)-oriented beta-SiC films consisting of submicron-sized grains were grown at 1273-1473 K, while carbon was codeposited with the beta-SiC films grown at 1573-1673 K. In an Ar atmosphere, amorphous Si-C-O films were grown at 1073-1373 K, while (111)-oriented beta-SiC films that did not contain free carbon were grown at 1473-1723 K. The deposition rates of the (111)-oriented beta-SiC films were 1500-2000 mu m h(-1). (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.