Through-Silicon Via Design for a 3-D Solid-State Drive System With Boost Converter in a Package
Through-Silicon Via Design for a 3-D Solid-State Drive System With Boost Converter in a Package
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封装内具有升压转换器的 3D 固态驱动系统的硅通孔设计
DOI：
10.1109/tcpmt.2010.2101930
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
K. Takeuchi
中科院分区：
文献类型：
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作者：
Koh Johguchi;T. Hatanaka;K. Ishida;Tadashi Yasufuku;M. Takamiya;Takayasu Sakurai;K. Takeuchi
提出了一种采用直通硅通孔(TSV)技术和Boost转换器的三维固态驱动系统。建议的Boost转换器能够将电源电压降低到1.8V和更小的NAND闪存芯片。从仿真结果来看，传统的键合-布线工艺只能实现8个NAND芯片的集成，这不仅是因为它们的结构问题，而且是因为性能的下降。另一方面，128NAND闪存芯片可以集成到全铜TSVs封装中，该系统20V的上升时间约为1.70nJ，功耗约为74.2nJ，一个NAND芯片的额外硅面积消耗为225nJ~2。即使使用多晶硅晶体管，由于工艺限制，通过将硅衬底研磨到10μm，与全铜晶体管相比，NAND芯片的上升时间延长了约34%，能耗降低了22%。
A 3-D solid-state drive system with through-silicon via (TSV) technology and boost converter is presented in this paper. The proposed boost converter enables the supply voltage reduction to 1.8 V and smaller NAND Flash memory chips. From the simulation results, the conventional bonding-wire technology can achieve only eight NAND chip integrations not only due to their structural problem but also due to the performance degradation. On the other hand, 128 NAND Flash memory chips can be integrated into a package with full-copper TSVs and the proposed system has about 1.70 μs of rise time for 20 V, 74.2 nJ of the energy dissipation, and 225 μm2 of additional Si area consumption for a NAND chip. Even if poly-Si TSVs are used, because of the process restriction, 64 NAND chips can be stacked with about 34% longer rise time and 22% degradation of energy dissipation compared to a full-copper TSV by grinding the Si-substrate to 10 μm .