The impact of silicon carbide technology on grid-connected Distributed Energy resources
The impact of silicon carbide technology on grid-connected Distributed Energy resources
复制标题
碳化硅技术对并网分布式能源的影响
DOI：
10.1109/isgteurope.2013.6695233
复制
发表时间：
2013
期刊：
影响因子：
--
通讯作者：
P. Mawby
中科院分区：
文献类型：
--
作者：
S. Jahdi;O. Alatise;P. Mawby
分布式能源可以使用传统上采用硅绝缘栅双极晶体管 (IGBT)、门极可关断晶闸管 (GTO) 和 PiN 二极管实现的电力电子转换器连接到电网。然而，最近开发的碳化硅技术可以提高能量转换效率以及功率密度。为了研究 SiC 技术带来的优势，我们在多电平电压源转换器 (VSC) 中对经过实验校准的 SiC MOSFET 模型进行了建模，以分析生成的谐波、转换器温升、开关损耗和滤波要求。模型显示，与硅 IGBT 相比，SiC MOSFET 中实现的转换器的运行温度低 25-75%，从而可能简化冷却。此外，与硅器件相比，在相同开关频率下，SiC MOSFET 产生的 THD 降低约 2%，开关损耗最多可降低 82%。
Distributed Energy sources can be connected to the electrical grid using power electronic converters traditionally implemented in silicon insulated gate bipolar transistors (IGBTs), gate turn-off thyristors (GTOs) and PiN diodes. However, recently developed SiC technology can improve energy conversion efficiency as well as power density. To investigate the benefits provided by SiC technology, experimentally calibrated SiC MOSFET models have been modeled in multilevel voltage sourced converters (VSCs) to analyze the generated harmonics, converter temperature rise, switching losses and filtering requirements. Models show that converters implemented in SiC MOSFETs operate at 25-75% less temperature compared with silicon IGBTs, potentially simplifying cooling. Also, SiC MOSFETs generate ~2% less THD for the same switching frequency and can reduce the switching loss by up to 82% compared to silicon devices.