Diffusion and charge dynamics of negatively charged muonium in n-type GaAs.
Diffusion and charge dynamics of negatively charged muonium in n-type GaAs.
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带负电的锷在 n 型 GaAs 中的扩散和电荷动力学。
DOI：
10.1103/physrevlett.76.3790
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发表时间：
1996
影响因子：
8.6
通讯作者：
Estle
中科院分区：
文献类型：
--
作者：
Chow;Hitti;Kiefl;Dunsiger;Lichti;Estle
We report measurements on the dynamics of negatively charged muonium ( ${\mathrm{Mu}}^{\ensuremath{-}}$) from 295 to 1000 K in heavily doped n-type GaAs:Si. The ${\mathrm{Mu}}^{\ensuremath{-}}$ center begins to diffuse above $500\mathrm{K}$ with a hop rate described by an Arrhenius function $\ensuremath{\nu}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}{\ensuremath{\nu}}_{0}{e}^{{\ensuremath{-}E}_{\ensuremath{\mu}}/{k}_{B}T}$ where ${\ensuremath{\nu}}_{0}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}5.6(5)\ifmmode\times\else\texttimes\fi{}{10}^{12}\phantom{\rule{0ex}{0ex}}{\mathrm{s}}^{\ensuremath{-}1}$ and ${E}_{\ensuremath{\mu}}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}0.73(1)\phantom{\rule{0ex}{0ex}}\mathrm{eV}$. Above $700\mathrm{K}$, relaxation from charge-state fluctuations is observed. The analysis of these data implies ${\mathrm{Mu}}^{\ensuremath{-}}\ensuremath{\leftrightarrow}{\mathrm{Mu}}^{0}$ conversions occur via alternating capture of holes and electrons, establishing Mu as a deep recombination center. Similar dynamics are expected for the isolated ${\mathrm{H}}^{\ensuremath{-}}$ center in n-type GaAs.
