Copper Oxide Passivation Effect on Electromigration Lifetime of Plasma Etched Copper Lines
Copper Oxide Passivation Effect on Electromigration Lifetime of Plasma Etched Copper Lines
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氧化铜钝化对等离子蚀刻铜线电迁移寿命的影响
DOI：
10.1149/09803.0099ecst
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Kuo, Yue
中科院分区：
文献类型：
--
作者：
Su, Jia Quan;Kuo, Yue
研究了室温等离子体刻蚀工艺制备的氧化铜钝化铜线在电迁移条件下的劣化。在等离子体蚀刻或反应离子蚀刻模式下操作的平行板等离子体反应器中将铜线表面氧化成氧化铜层。氧化物的表面粗糙度由高离子轰击能量贡献。氧化物钝化层的加入缩短了样品的寿命。随着应力电流密度的增大，其电流密度也随之减小.与厚体铜层的样品相比，薄体铜层的样品更能抵抗热应力，从而延迟了断线过程中空洞的形成。
The degradation of the copper oxide passivated copper line prepared from a room temperature plasma-based etch process under the electromigration condition has been studied. The copper line surface was oxidized into the copper oxide layer in a parallel-plate plasma reactor operated under the plasma etching or reactive ion etching mode. The surface roughness of the oxide is contributed by the high ion bombardment energy. The lifetime of the sample was shortened by the addition of the oxide passivation layer. It was also decreased with the increase of the stress current density. The sample with the thin bulk copper layer is more resistant to the thermal stress than that with the thick bulk copper layer, which delayed the voids formation in the line breakage process.