Investigation of short wavelength intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrate
Investigation of short wavelength intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrate
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GaAs 衬底上 InGaAs/AlAs 量子阱中短波长子带间跃迁的研究
DOI：
10.1063/1.365652
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发表时间：
1997
影响因子：
3.2
通讯作者：
A. Sasaki
中科院分区：
文献类型：
--
作者：
T. Asano;S. Noda;T. Abe;A. Sasaki
研究了GaAs衬底上InGaAs/AlAs量子阱的近红外亚带间跃迁。利用基于k-p摄动方法的理论计算，定量研究了子带间吸收特性与量子阱结构/生长条件之间的关系。总的子带间吸收大小与自由载流子从井的Γ最小值到屏障的X最小值的泄漏密切相关。这项工作为设计利用短波长子带间转换的器件提供了重要信息。
InGaAs/AlAs quantum wells on GaAs substrates were studied for near-infrared intersubband transitions. The relationships between the properties of the intersubband absorption and the structural/growth conditions of the quantum wells were quantitatively investigated by using theoretical calculations based on a k-p perturbation method. The total intersubband absorption magnitude is shown to be closely related to the leakage of free carriers from the Γ minimum of the well to the X minimum of the barrier. This work provides important information for design of devices utilizing short wavelength intersubband transitions.
DOI：
--
发表时间：
2016
期刊：
影响因子：
--
作者：
Koichiro Tanaka
通讯作者：
Koichiro Tanaka