Microfabrication of piezoelectric MEMS
Microfabrication of piezoelectric MEMS
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DOI：
10.1023/b:jecr.0000034000.11787.90
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发表时间：
2004-01-01
影响因子：
1.7
通讯作者：
Baborowski, J
中科院分区：
文献类型：
--
作者：
Baborowski, J
在本文中，我们概述了在平面结构中使用PZT （Pb(ZrxTi1-x)O-3）制造压电薄膜器件的工艺。这些结构用于悬臂状和膜状结构，用于传感和驱动。为PZT、电极、SiO2和硅衬底的图案设计一个兼容的湿法和干法蚀刻顺序是关键问题。提出了一种补偿机械应力以获得平面多层结构的方法。膜厚度的定义和结构的释放是通过硅（SOI -绝缘体衬底上的硅）的深度反应离子刻蚀或表面微加工获得的。完整的过程已用于制造悬臂阵列，超声波换能器和压力传感器。最终器件获得了良好的介电常数和横向压电系数。其他应用的例子，如：铁电存储器，纳米图像化和PZT的局部生长。压电MEMS的微加工是一项复杂的任务，从器件设计、材料性能、微加工到性能评估等各个方面都密切相关。
In this paper we present an overview of processes for fabrication of piezoelectric thin film devices using PZT (Pb(ZrxTi1-x)O-3) in planar structures. These structures are used in cantilever-like and membrane configurations for sensing and actuation. Elaboration of a compatible wet and dry etching sequence for patterning of PZT, electrodes, SiO2 and silicon substrate is the key issues. The method for compensation of mechanical stresses to obtain flat, multilayer structures is demonstrated. Definition of membrane thickness and release of the structures are obtained by Deep Reactive Ion Etching of silicon (SOI - silicon on insulator substrates) or by surface micromachining. The complete process has been used for fabrication of cantilever arrays, ultrasonic transducers and pressure sensors. Excellent permittivity and transverse piezoelectric coefficient of PZT have been obtained with the final devices. Other examples of applications like: ferroelectric memories, nanopatterning and local growth of PZT are presented as well.The microfabrication of piezoelectric MEMS was found to be a complex task where all aspects from device design, material properties and microfabrication to assessment of performance are closely interconnected.