Superluminescent diodes for visible (670 nm) spectral range based on AlGaInP/GaInP heterostructures with tapered grounded absorber
Superluminescent diodes for visible (670 nm) spectral range based on AlGaInP/GaInP heterostructures with tapered grounded absorber
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基于具有锥形接地吸收体的 AlGaInP/GaInP 异质结构的可见光 (670 nm) 光谱范围的超发光二极管
DOI：
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发表时间：
1993
期刊：
影响因子：
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通讯作者：
M. V. Zverkov
中科院分区：
文献类型：
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作者：
A. T. Semenov;V. Shidlovski;S. A. Safin;V. Konyaev;M. V. Zverkov
研制了基于AlGaInP/GaInP异质结构的可见光（670 nm）超辐射发光二极管（SLD）。SLD在20 ℃时的CW输出功率高达4 mW，光谱带宽为12 nm，光谱涟漪小于10%。<
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Visible (670 nm) superluminescent diodes (SLDs) based on AlGaInP/GaInP heterostructures with tapered grounded absorber have been developed. The SLDs have CW output power up to 4 mW at 20 degrees C, spectral bandwidth 12 nm and spectral ripple less than 10%.<
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