Characterization of silicon dioxide film by high spatial resolution cathodoluminescence spectroscopy
Characterization of silicon dioxide film by high spatial resolution cathodoluminescence spectroscopy
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高空间分辨率阴极发光光谱表征二氧化硅薄膜
DOI：
10.1063/1.1520726
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发表时间：
2002
影响因子：
3.2
通讯作者：
T. Yamane
中科院分区：
文献类型：
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作者：
M. Yoshikawa;K. Matsuda;Y. Yamaguchi;T. Matsunobe;Y. Nagasawa;H. Fujino;T. Yamane
我们已经测量了由各种方法制备的二氧化硅（SiO2）薄膜的阴极射线发光（CL）光谱，并在280，445，480，520和640 nm处观察到峰。通过比较掺硅石英玻璃的化学发光谱和电子自旋共振谱，发现445和480 nm的峰来自氧空位中心，而不是E′中心。从化学发光测量的横截面的热生长的SiO2膜沉积在Si衬底上，我们发现，445和480 nm的峰的相对强度强于在640 nm的CL峰。该CL峰归因于非桥接氧化空穴中心或其前体。此外，16 M动态随机存取存储器器件的横截面的CL测量揭示了栅极氧化物膜中的相对强度强于层间氧化物膜中的相对强度。这些数据表明，氧空位中心的含量增加的SiO2膜和Si之间的界面附近。
We have measured the cathodoluminescence (CL) spectra of silicon dioxide (SiO2) films prepared by a variety of methods and observed peaks at 280, 445, 480, 520, and 640 nm. A comparison of the CL and electron spin resonance spectra of Si-doped quartz glass showed that the 445 and 480 nm peaks originated from oxygen vacancy centers, which were different from E′ centers. From CL measurement of a cross section of thermally grown SiO2 film deposited on a Si substrate, we found that the relative intensities of the 445 and 480 nm peaks were stronger than that of the CL peak at 640 nm. This CL peak was attributed to the nonbridging oxidation hole centers or their precursors. Furthermore, CL measurement of a cross section of a 16 M dynamic random-access memory device revealed that the relative intensity in the gate oxide film was stronger than that in the interlayer oxide film. These data suggest that the content of oxygen vacancy centers increases in the vicinity of the interface between the SiO2 film and the Si...