Bulk synthesis, growth mechanism and properties of highly pure ultrafine boron nitride nanotubes with diameters of sub-10 nm

Bulk synthesis, growth mechanism and properties of highly pure ultrafine boron nitride nanotubes with diameters of sub-10 nm
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DOI:
10.1088/0957-4484/22/14/145602
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发表时间:
2011-04-08
期刊:
影响因子:
3.5
通讯作者:
Golberg, Dmitri
Golberg, Dmitri
中科院分区:
材料科学3区
文献类型:
--
作者:
Huang, Yang;Lin, Jing;Golberg, Dmitri

文献摘要

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氮化硼纳米管(BNNT)作为碳纳米管(CNT)的结构类似物,已成为最受关注的非碳纳米结构之一。然而,到目前为止,BNNT合成的现有限制/限制使其研究进展相当有限。本文提出了一种基于改性氧化硼(BO) CVD法合成高纯超细bnnt的新途径。提出了一种新的有效前驱体——Li(2)O和b的混合物,用于大量生长薄的、少层的bnnt。Li(2)O作为前驱体对纳米管的生长起着至关重要的作用。制备的bnnt平均外径在10 nm以下,长度可达数十μ m。电子能量损失光谱和拉曼光谱显示了超细bnnt的最终相纯度。性能研究表明,该超细纳米管具有优异的抗氧化性和强紫外辐射能力,是理想的电绝缘体。此外,它们的直径减小导致管壁内缺陷的数量急剧减少,并导致在室温下观察到近带边(NBE)发射。
As a structural analogue of the carbon nanotube (CNT), the boron nitride nanotube (BNNT) has become one of the most intriguing non-carbon nanostructures. However, up to now the pre-existing restrictions/limitations of BNNT syntheses have made the progress in their research rather modest. This work presents a new route toward the synthesis of highly pure ultrafine BNNTs based on a modified boron oxide (BO) CVD method. A new effective precursor-a mixture of Li(2)O and B-has been proposed for the growth of thin, few-layer BNNTs in bulk amounts. The Li(2)O utilized as the precursor plays the crucial role for the present nanotube growth. The prepared BNNTs have average external diameters of sub-10 nm and lengths of up to tens of mu m. Electron energy loss spectrometry and Raman spectroscopy demonstrate the ultimate phase purity of the ultrafine BNNTs. Property studies indicate that the ultrafine nanotubes are perfect electrical insulators exhibiting superb resistance to oxidation and strong UV emission. Moreover, their reduced diameters lead to a dramatically decreased population of defects within the tube walls and result in the observation of near-band-edge (NBE) emission at room temperature.