Silicon on insulator for symmetry-converted growth
Silicon on insulator for symmetry-converted growth
复制标题
DOI：
10.1063/1.2748099
复制
发表时间：
2007-06-11
影响因子：
4
通讯作者：
Sakurai, T.
中科院分区：
文献类型：
--
作者：
Fujikawa, Y.;Yamada-Takamura, Y.;Sakurai, T.
金属和半导体的集成在面向器件的[即，具有四重对称性的硅晶片是一个长期存在的挑战。作者证明了，通过使用硅-绝缘体转换的（111）硅，具有三重对称性的纤锌矿结构氮化镓可以与Si（001）集成。单晶转化的Si（111）层的稳定性使得该技术吸引广泛的重要材料到Si（001）基晶片上的商业集成。(c)2007年，美国物理学会。
Integration of metals and semiconductors having three- or sixfold symmetry on device-oriented [i.e., (001)] silicon wafers, which have fourfold symmetry, has been a long-standing challenge. The authors demonstrate that, by using symmetry-converted (111) silicon on insulator, wurtzite-structure gallium nitride, which has threefold symmetry, can be integrated with Si(001). The stability of the symmetry-converted Si(111) layer makes this technique appealing to the commercial integration of wide-ranging important materials onto Si(001) base wafers. (c) 2007 American Institute of Physics.