Realization of ohmic-like contact between ferromagnet and rubrene single crystal
Realization of ohmic-like contact between ferromagnet and rubrene single crystal
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DOI：
10.1063/1.4745778
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发表时间：
2012-08
影响因子：
4
通讯作者：
Y. Kitamura;E. Shikoh;Kosuke Sawabe;T. Takenobu;M. Shiraishi
中科院分区：
文献类型：
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作者：
Y. Kitamura;E. Shikoh;Kosuke Sawabe;T. Takenobu;M. Shiraishi
我们报道了通过在器件连接处插入四氟-四氰喹诺二甲烷（F4TCNQ）、三氧化钼（MoO3）或四氰喹诺二甲烷（TCNQ）层，可以显著降低镍(Ni)/rubrene器件中的肖特基势垒高度（SBH）。具有F4TCNQ和MoO3层的器件表现出类似欧姆的特性，而具有TCNQ层的器件表现出较低的SBH （0.26 eV）。无受体层的Ni/rubrene器件的SBH为0.56 eV。我们用薄层的电子接受特性来解释SBH的降低。这些层可用于制造具有欧姆接触的分子自旋电子学器件，用于有效的电自旋注入。
We report a significant lowering of the Schottky barrier height (SBH) in nickel (Ni)/rubrene devices by the insertion of a tetrafluoro-tetracyanoquinodimethane (F4TCNQ), molybdenum trioxide (MoO3), or tetracyanoquinodimethane (TCNQ) layers at the device junction. Devices with F4TCNQ and MoO3 layers show ohmic-like characteristics, whereas the device with the TCNQ layer shows a low SBH (0.26 eV). The SBH of Ni/rubrene device without the acceptor layers is 0.56 eV. We explain the SBH lowering by the electron accepting properties of the thin layers. Such layers can be used to fabricate molecular spintronics devices with ohmic contacts for effective electrical spin injection.