Size-Controlled Porous Nanostructures Formed on InP(001) Substrates by Two-Step Electrochemical Process
Size-Controlled Porous Nanostructures Formed on InP(001) Substrates by Two-Step Electrochemical Process
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DOI：
10.1143/jjap.46.4375
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发表时间：
2007-07
影响因子：
1.5
通讯作者：
T. Fujino;Taketomo Sato;T. Hashizume
中科院分区：
文献类型：
--
作者：
T. Fujino;Taketomo Sato;T. Hashizume
通过阳极和阴极两步电化学反应在InP(001)衬底上形成了尺寸可控的高密度多孔纳米结构阵列。在阳极氧化形成InP多孔结构后，我们随后应用阴极分解来减少InP孔壁的横向厚度。孔壁的刻蚀速率非常低，并且强烈依赖于阴极偏压和壁面的晶体取向。通过改变阴极偏压和阴极分解时间，InP的厚度可以精确控制在15-30 nm的范围内。从室温下的光致发光测量来看，由于较薄的InP纳米球中的量子限制，多孔结构显示出强烈的蓝移发射。
A high-density array of size-controlled porous nanostructures was formed on InP(001) substrates by a two-step electrochemical process using anodic and cathodic reactions. After the formation of InP porous structures by anodization, we subsequently applied cathodic decomposition to the reduction of the lateral thickness of the InP pore wall. The etching rate of the pore wall was extremely low and strongly dependent on the cathodic bias and crystal orientations of the wall surface. The thickness of InP walls could be precisely controlled in the range of 15–30 nm by changing cathodic bias and cathodic decomposition time. From the PL measurement at room temperature, the porous structures showed strong blue-shifted emissions due to quantum confinement in thinner InP nanowalls.