Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current
Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current
复制标题
使用基于同步加速器的光谱分辨 X 射线束感应电流量化富金属沉淀物对多晶硅中少数载流子扩散长度的影响
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
E. Weber
中科院分区：
文献类型：
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作者：
T. Buonassisi;A. A. Istratov;M. Pickett;M. Marcus;G. Hahn;S. Riepe;J. Isenberg;W. Warta;G. Willeke;T. Ciszek;E. Weber
介绍了一种基于同步加速器的光谱分辨X射线束感生电流（SR-XBIC）技术，用于半导体器件中少数载流子扩散长度的局部测量。证明了与成熟的扩散长度测量技术的等效性。SR-XBIC的优势在于它可以与其他基于同步加速器的分析技术（如X射线荧光显微镜（μ-XRF）和X射线吸收显微光谱（μ-XAS））原位结合，从而获得有关多晶硅中单个过渡金属物种的分布、元素组成、化学性质以及对少数载流子扩散长度的影响的信息。对故意污染的多晶硅进行了SR-XBIC、μ-XRF和μ-XAS测量，揭示了铜和镍硅化物沉淀物的局部浓度与少子扩散长度的减小之间的强相关性。此外，由于微电子束的引入，减少了少子扩散长度。
Synchrotron-based, spectrally resolved x-ray beam-induced current (SR-XBIC) is introduced as a technique to locally measure the minority carrier diffusion length in semiconductor devices. Equivalence with well-established diffusion length measurement techniques is demonstrated. The strength of SR-XBIC is that it can be combined in situ with other synchrotron-based analytical techniques, such as x-ray fluorescence microscopy (μ-XRF) and x-ray absorption microspectroscopy (μ-XAS), yielding information about the distribution, elemental composition, chemical nature, and effect on minority carrier diffusion length of individual transition metal species in multicrystalline silicon. SR-XBIC, μ-XRF, and μ-XAS measurements were performed on intentionally contaminated multicrystalline silicon, revealing a strong correlation between local concentrations of copper and nickel silicide precipitates and a decrease of minority carrier diffusion length. In addition, the reduction of minority carrier diffusion length due t...