Implant-free high-mobility flatband MOSFET: principles of operation
Implant-free high-mobility flatband MOSFET: principles of operation
复制标题
无植入高迁移率平带 MOSFET：工作原理
DOI：
10.1109/ted.2006.882393
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发表时间：
2006
影响因子：
3.1
通讯作者：
R. Droopad
中科院分区：
文献类型：
--
作者：
M. Passlack;K. Rajagopalan;J. Abrokwah;R. Droopad
讨论了无注入增强型MOSFET（平带MOSFET）的工作原理。在GaAs衬底上制作了用于无注入增强型器件的外延层结构，该结构采用高k介质（kappacong 20）和厚度为10 nm的应变InGaAs沟道层。从测得的电子迁移率μ作为一个函数的片状载流子浓度，增强模式的设计考虑，饱和电流IDSS，和迁移率的要求进行了讨论，使用二维器件模拟。为了使平带MOSFET能够成功地与其他器件设计竞争，需要一定的最小沟道迁移率。对于RF应用，mu应超过5000 cm 2/Vs，而用于数字应用的高性能MOSFET可能需要更高的迁移率才能实现最佳工作状态。最后，给出了第一个1 μ m-GaAs平带增强型MOSFET的测量数据，推导了InGaAs沟道层的饱和速度，并将测量的IDss数据与模拟结果进行了比较
Principles of operation of implant-free enhancement-mode MOSFETs (flatband MOSFET) are discussed. Epitaxial-layer structures designed for use in implant-free enhancement-mode devices and employing a high-kappa dielectric (kappacong20) and a strained InGaAs channel layer with a thickness of 10 nm have been manufactured on GaAs substrate. Proceeding from measured electron mobility mu as a function of the sheet-carrier concentration, enhancement-mode design considerations, saturation current IDss, and mobility requirements are discussed using two-dimensional device simulations. For the flatband MOSFET to compete successfully with other device designs, certain minimum channel mobilities are required. For RF applications, mu should exceed 5000 cm2/Vs while high-performance MOSFETs for digital applications may require even higher mobility for optimum operation. Finally, measured data of first 1-mum-GaAs-flatband enhancement-mode MOSFETs are presented; the saturation velocity of the InGaAs channel layer is derived; and measured IDss data are compared to the results obtained by simulations