Properties Of Cosb 3 Films Grown by Pulsed Laser Deposition
Properties Of Cosb 3 Films Grown by Pulsed Laser Deposition
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DOI：
10.1557/proc-478-217
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
H. Christen;D. Mandrus;D. Norton;L. Boatner;B. Sales
中科院分区：
文献类型：
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作者：
H. Christen;D. Mandrus;D. Norton;L. Boatner;B. Sales
Polycrystalline CoSb 3 films were grown on a variety of electrically insulating substrates by pulsed laser ablation from a stoichiometric hot-pressed target. These films are fully crystallized in the skutterudite structure, and the grains exhibit a strongly preferred alignment of the cubic [310]-axis perpendicular to the substrate surface. The film quality is studied for different single-crystal substrates and as a function of growth temperature and background gas. Hall measurements show that the films are p-type semiconducting with a room-temperature carrier density of 3×10 20 holes/cm 3 . The Hall mobility is found to be 50 to 60 cm 2 /Vs, which is high for such a heavily-doped material. The Seebeck coefficient and the resistivity are measured as a function of temperature and are compared to bulk measurements.
