Y.Nakabayashi, H.I.Osman, K.Yokota, K.Toyonaga, S.Matsumoto, J.Murota, K.Wada, T.Abe: "Type and charge states of point defects in heavily As-and B-doped silicon"Materials Science in Semiconductor Processing. Vol.6. 15-19 (2003)
Y.Nakabayashi, H.I.Osman, K.Yokota, K.Toyonaga, S.Matsumoto, J.Murota, K.Wada, T.Abe: "Type and charge states of point defects in heavily As-and B-doped silicon"Materials Science in Semiconductor Processing. Vol.6. 15-19 (2003)
复制标题
Y.Nakabayashi、H.I.Osman、K.Yokota、K.Toyonaga、S.Matsumoto、J.Murota、K.Wada、T.Abe:“重砷和硼掺杂硅中点缺陷的类型和电荷状态”材料
DOI:
--
复制
发表时间:
--
期刊:
影响因子:
--
通讯作者:
中科院分区:
文献类型:
--
作者: