Hole Injection and Etching Studies of GaAs Using the Scanning Electrochemical Microscope
Hole Injection and Etching Studies of GaAs Using the Scanning Electrochemical Microscope
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DOI：
10.1021/la00099a010
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发表时间：
1990-09
期刊：
影响因子：
3.9
通讯作者：
D. Mandler;A. Bard
中科院分区：
文献类型：
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作者：
D. Mandler;A. Bard
利用扫描电化学显微镜（SECM）研究了砷化镓表面的蚀刻过程。利用SECM的反馈模式研究了几种电生成氧化剂对n型、p型和未掺杂GaAs的空穴注入。通过研究不同ph值和不同氧化还原对下反馈电流的行为，确定了该过程为氧化还原偶体向价带注入空穴，并确定了半导体中价带边缘的能量。掺杂剂的性质对蚀刻过程有很大的影响。n-GaAs和未掺杂GaAs采用反馈刻蚀方式，p-GaAs则完全电阻刻蚀。n-GaAs和p-GaAs之间的差异是根据半导体-电解质相互作用来解释的。
A scanning electrochemical microscope (SECM) was used as an analytical tool to study the etching of GaAs surfaces. Hole injection from several electrogenerated oxidants to n-type, p-type, and undoped GaAs was examined by the feedback mode of the SECM. Assignment of the process as a hole injection from the oxidized form of the redox couple into the valence band and assignment of the energy of the valence band edge in the semiconductor were made by studying the behavior of the feedback current at various pHs and with different redox couples. The nature of the dopant strongly affected the etching process. n-GaAs and undoped GaAs were etched by using the feedback mode while p-GaAs was completely resistive toward etching. The differences between n-GaAs and p-GaAs are explained in terms of semiconductor-electrolyte interactions.