Piezoelectric Properties of Bismuth Sodium Titanate Ceramics
Piezoelectric Properties of Bismuth Sodium Titanate Ceramics
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DOI：
10.1002/9781118408186.ch20
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发表时间：
2012-04
期刊：
影响因子：
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通讯作者：
H. Nagata;Takashima Shinya;Y. Hiruma;T. Takenaka;I. Sakaguchi;H. Haneda
中科院分区：
文献类型：
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作者：
H. Nagata;Takashima Shinya;Y. Hiruma;T. Takenaka;I. Sakaguchi;H. Haneda
Bi过量钛酸铋钠陶瓷，BNT+Bi；哦；制备并研究了 x wt%[BNT-x] 和热压 (HP) BNT 陶瓷，旨在评估 BNT 陶瓷的真实压电性能。在 I225 C 下烧结 30 分钟的 BNT-0.3 陶瓷的机电耦合系数[(33，压电常数：1”估计分别为 0.47 和 93 pC/N。这是在极化后通过共振-反共振方法测量的。BNT-x (x= 0-2.0 wt%) 陶瓷是通过传统陶瓷制造技术制备的，并且所有 BNT-x 陶瓷均显示出与观察/理论密度相比超过 95% 的高密度比，BNT-0.3 陶瓷的电阻率 p 显示出约 10N Q-cm 的最大值，而 HP-BNT-0 陶瓷的 k;; 和 d; 3 在 I00C 压力下制备。 200 kg/cm2 分别为 0.48 和 98 pC/N 从热像仪（TG，重量损失）测量中，Bi 汽化引起的重量损失是在 1130 C 以上的温度下进行的。据认为，Bi 汽化的抑制是在 I100℃下烧结而没有 Bi 汽化的 HP-BNT 陶瓷获得相对较大且真实的 kn 值的原因。
The Bi-excess bismuth sodium titanate ceramics, BNT+ Bi; O; x wt%[BNT-x], and hot-pressed (HP) BNT ceramics were prepared and investigated as aiming to estimate true piezoelectric properties of the BNT ceramic. An electromechanical coupling factor,[(33, and piezoelectric constant,: 1”, of the BNT-0.3 ceramic sintered at I225 C for 30 min were estimated to be 0.47 and 93 pC/N, respectively. That was measured by means of a resonance-antiresonance method after the poling. BNT-x (x= 0-2.0 wt%) ceramics were prepared by means of a conventional ceramic fabrication technique and sintered at I225 C for 5 min-I00 h. All of BNT-x ceramics showed a high density-ratio of more than 95% to an observed/theoretical density. A resistivity, p, of the BNT-0.3 ceramic shows the largest value of about l0N Q-cm. While, k;;, and d; 3, of the HP-BNT-0 ceramic prepared at I I00 C for 30 min with a pressure of 200 kg/cm2 were 0.48 and 98 pC/N, respectively. From the thermograph (TG, Weight loss) measurement, the weight loss caused by the Bi vaporization was carried out at a temperature above 1130 C. It is thought that the suppression of Bi vaporization is the reason why the relatively large and true kn values were obtained for HP-BNT ceramic sintered at I100 “C without Bi vaporization.