80/160-GHz Transceiver and 140-GHz Amplifier in SiGe Technology
80/160-GHz Transceiver and 140-GHz Amplifier in SiGe Technology
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采用 SiGe 技术的 80/160 GHz 收发器和 140 GHz 放大器
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
S. Voinigescu
中科院分区：
文献类型：
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作者：
E. Laskin;P. Chevalier;A. Chantre;B. Sautreuil;S. Voinigescu
采用SiGe HBT工艺研制了一种在80 GHz和160 GHz频段同时发射和接收的双波段毫米波成像收发器。该电路具有一个80 GHz正交Colpitts振荡器，具有160 GHz差分输出，一个双平衡Gilbert单元混频器，以及两个用于单端到差分转换的70-270 GHz宽带垂直堆叠变压器。对于70 GHz至94 GHz的RF输入，差分下变频增益为-20.5 dB;对于150-170 GHz频段的输入，差分下变频增益为-23.5 dB。振荡器在80 GHz时产生+5.5 dBm的总功率，在160 GHz时产生-5 dBm的差分功率。该收发器与垫占用650妈妈700妈妈，偏置从3.3 V，消耗280 mW。在140 GHz时，具有17 dB增益和-1 dBm输出压缩功率的5级放大器也被制造出来，并在高达125 degC的温度和14种不同的晶片分割上进行了表征。这些结果首次证明了SiGe BiCMOS技术在100-160 GHz范围内的产品的可行性。
A dual-band mm-wave imaging transceiver, transmitting and receiving simultaneously in the 80-GHz and 160-GHz bands, is fabricated in SiGe HBT technology. The circuit features an 80-GHz quadrature Colpitts oscillator with differential outputs at 160 GHz, a double-balanced Gilbert-cell mixer, and two broadband 70-270 GHz vertically stacked transformers for single-ended to differential conversion. The differential down-conversion gain is -20.5 dB for RF inputs between 70 GHz and 94 GHz and -23.5 dB for inputs in the 150-170 GHz band. The oscillator generates a total of +5.5 dBm at 80 GHz and -5 dBm differentially at 160 GHz. The transceiver with pads occupies 650 mum times 700 mum, is biased from 3.3 V, and consumes 280 mW. A 5-stage amplifier with 17 dB gain and -1 dBm output compression power at 140 GHz is also fabricated and characterized over temperature up to 125degC and over 14 different wafer splits. These results demonstrate for the first time the feasibility of SiGe BiCMOS technology for products in the 100-160 GHz range.