Ti/Ni/Ti/Au Ohmic contact and Schottky transformation to Al-doped ZnO thin films
Ti/Ni/Ti/Au Ohmic contact and Schottky transformation to Al-doped ZnO thin films
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DOI：
10.1016/j.jallcom.2012.12.104
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发表时间：
2013-04
影响因子：
6.2
通讯作者：
Jian Gu;Y. Lu;J. Zhang;Linshen Chen;Z. Ye
中科院分区：
文献类型：
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作者：
Jian Gu;Y. Lu;J. Zhang;Linshen Chen;Z. Ye
本文报道了一种Ti（50 nm）/Ni（50 nm）/Ti（50 nm）/Au（50 nm）多层金属接触Al掺杂ZnO薄膜（ND=3.64× 1019 cm-3）。所沉积的Ti/Ni/Ti/Au方案显示出2.07×10−4Ω cm 2的比接触电阻率。500°C退火后，接触电阻率最低，为6.69×10−5Ω cm 2。在500°C以下退火时，接触电阻率随退火温度的升高呈下降趋势。而在600°C以上退火时，样品的I-V曲线显示出逐渐的肖特基转变。退火处理引起的界面扩散和反应被认为是欧姆接触电阻率下降和肖特基转变的原因。
A multi-layered Ti (50nm)/Ni (50nm)/Ti (50nm)/Au (50nm) metallic contact to Al-doped ZnO thin films (ND=3.64×1019cm−3) was reported in this paper. The as-deposited Ti/Ni/Ti/Au scheme showed a specific contact resistivity of 2.07×10−4Ωcm2. And a lowest specific contact resistivity of 6.69×10−5Ωcm2was obtained after annealing at 500°C. The specific contact resistivity showed a decreasing tendency with the annealing temperature up to 500°C. However, for the sample annealed at above 600°C, the I–V curves revealed gradual Schottky transformation. Interface diffusions and reactions induced by annealing treatment were found to be responsible for the decrease of Ohmic contact resistivity and the Schottky transformation.