A 2GHz GaN Class-J power amplifier for base station applications
A 2GHz GaN Class-J power amplifier for base station applications
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DOI：
10.1109/pawr.2011.5725378
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发表时间：
2011-03
期刊：
影响因子：
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通讯作者：
Konstantinos Mimis;Kevin A Morris;Joe McGeehan
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文献类型：
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作者：
Konstantinos Mimis;Kevin A Morris;Joe McGeehan
报道了一种应用于基站的高效率J类功率放大器（PA）的设计与实现。使用市售的10W GaN HEMT器件，对于该器件，大信号模型和非本征寄生模型是可用的。根据J类理论，定义并实现了晶体管输出端所需的谐波终端。实验结果表明，良好的协议与仿真验证类的操作。在输入驱动为29dBm时，输出功率为39.7dBm，效率超过70%。在140MHz的带宽上保持高效率。
The design and implementation of a high efficiency Class-J power amplifier (PA) for basestation applications is reported. A commercially available 10W GaN HEMT device was used, for which a large-signal model and an extrinsic parasitic model were available. Following Class-J theory, the needed harmonic terminations at the output of the transistor were defined and realised. Experimental results show good agreement with simulations verifying the class of operation. Efficiency above 70% is demonstrated with an output power of 39.7dBm at an input drive of 29dBm. High efficiency is sustained over a bandwidth of 140MHz.