Hall hole mobility in boron-doped homoepitaxial diamond
Hall hole mobility in boron-doped homoepitaxial diamond
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DOI：
10.1103/physrevb.81.205203
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发表时间：
2010-05-15
影响因子：
3.7
通讯作者：
Teraji, T.
中科院分区：
文献类型：
--
作者：
Pernot, J.;Volpe, P. N.;Teraji, T.
在100-900 K温度范围内，对掺硼同质外延（100）金刚石样品的霍尔空穴迁移率进行了实验和理论研究。在高质量和低硼掺杂材料中测量的迁移率的温度依赖性与理论计算进行比较，以确定声子-空穴耦合常数（声学声子的变形势和光学声子的耦合常数）。在室温下，最大空穴迁移率接近2000 cm（2）/Vs。对于掺硼材料，由于硼受体的高电离能，中性硼原子的空穴散射在金刚石中被证明是重要的。在300和500 K下，对于10（14）和10（20）cm（-3）之间的硼掺杂水平，建立了霍尔空穴迁移率的掺杂依赖性。讨论了金刚石成为具有比其他IV族半导体更高迁移率的半导体的物理原因。
Hall hole mobility of boron-doped homoepitaxial (100) diamond samples has been investigated in the temperature range of 100-900 K, both experimentally and theoretically. The temperature dependence of the mobility measured in high-quality and low boron-doped materials was compared with theoretical calculations to determine the phonon-hole coupling constants (deformation potential for acoustic phonons and coupling constant for optical phonons). The maximum hole mobility is found to be close to 2000 cm(2)/Vs at room temperature. For boron-doped material, the hole scattering by neutral boron atoms is shown to be important in diamond due to the high ionization energy of the boron acceptor. The doping dependence of the Hall hole mobility is established for boron-doping levels ranging between 10(14) and 10(20) cm(-3) at 300 and 500 K. The physical reasons which make diamond a semiconductor with a higher mobility than other semiconductors of column IV are discussed.