CdSe/ZnS quantum dot encapsulated MoS2 phototransistor for enhanced radiation hardness
CdSe/ZnS quantum dot encapsulated MoS2 phototransistor for enhanced radiation hardness
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DOI：
10.1038/s41598-018-37902-y
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发表时间：
2019-02
影响因子：
4.6
通讯作者：
Jinwu Park;G. Yoo;J. Heo
中科院分区：
文献类型：
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作者：
Jinwu Park;G. Yoo;J. Heo
基于mos2的光电晶体管的研究取得了显著的进展，显示了其在光电探测器各个领域的巨大应用潜力，为了进一步扩大其应用范围，迫切需要对mos2光电晶体管在恶劣环境下的耐久性进行研究。本文研究了伽马射线对mos2光电晶体管特性的影响，并通过将CdSe/ZnS量子点作为封装层来提高其辐射硬度。400 Gy的伽马射线照射后，光响应率下降73.83%，采用CYTOP和CdSe/ZnS量子点层，伽马射线照射后的光响应率平均保持在75.16%。研究结果表明，具有高原子序数的CdSe/ZnS量子点可以作为一种有效的封装方法来提高mos2光电晶体管的辐射硬度，从而保持其性能。
Notable progress achieved in studying MoS2based phototransistors reveals the great potential to be applicable in various field of photodetectors, and to further expand it, a durability study of MoS2phototransistors in harsh environments is highly required. Here, we investigate effects of gamma rays on the characteristics of MoS2phototransistors and improve its radiation hardness by incorporating CdSe/ZnS quantum dots as an encapsulation layer. A 73.83% decrease in the photoresponsivity was observed after gamma ray irradiation of 400 Gy, and using a CYTOP and CdSe/ZnS quantum dot layer, the photoresponsivity was successfully retained at 75.16% on average after the gamma ray irradiation. Our results indicate that the CdSe/ZnS quantum dots having a high atomic number can be an effective encapsulation method to improve radiation hardness and thus to maintain the performance of the MoS2phototransistor.