Dislocation luminescence in plastically deformed silicon crystals: effect of dislocation intersection and oxygen decoration
Dislocation luminescence in plastically deformed silicon crystals: effect of dislocation intersection and oxygen decoration
复制标题
塑性变形硅晶体中的位错发光：位错交叉和氧修饰的影响
DOI：
10.1051/epjap:2004146
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
S. Pizzini
中科院分区：
文献类型：
--
作者：
E. Leoni;S. Binetti;B. Pichaud;S. Pizzini
本文讨论了直拉硅单晶在0.8eV的D_1发光范围内，位错结构和杂质污染对光致发光的影响。两种类型的位错系统被认为是。一种由螺钉和60°节段的交叉六边形半环组成。另一种是由一组不相交的平行60°位错组成。在这两种情况下，塑性变形过程都是在。670 °C，注意避免不必要的杂质污染。结果表明，在D1区中纯60°位错的PL省略丢失了0.807 eV分量，并且由叠加在以0.830 eV为中心的宽背景上的0.817 eV处的窄手组成。它还表明，相交的半环系统提出了0.807 eV和0.817 eV的组件。的效果，在800 °C的热退火被证明是诱导氧沉淀效应，揭示了补充光谱特征。最后证明了D1带的建立与60°位错被金属杂质污染没有必然联系。氧对位错发光的主要作用最终被实验证实。
This paper is addressed to the discussion of the effect, of the dislocation structure and the impurity contamination on the photoluminescence of Czochralski (Cz) silicon in the range of the D1 emission at 0.8 eV. Two types of dislocation systems were considered. One consists of intersecting hexagonal half loops of screw and 60° segments. The other one consists of a set of non-intersecting, parallel 60° dislocations. In both cases the plastic deformation processes were carried out at. 670 °C, taking care to avoid unwanted impurity contamination. It is shown that the PL omission of pure 60° dislocations in the Dl region is missing the 0.807 eV component and consists of a narrow hand at 0.817 eV superimposed onto a broad background centered at 0.830 eV. It is also shown that a system of intersecting half loops presents both the 0.807 eV and the 0.817 eV components. The effect, of thermal annealing at, 800 °C was shown to induce oxygen precipitation effects, revealed by supplementary spectral features. It is eventually demonstrated that the set up of the D1 band is not necessarily connected with the contamination of 60° dislocations with metallic impurities. The major role of oxygen on the dislocation luminescence is eventually experimentally confirmed.