Cr∕Pt Ohmic contacts to B12As2
Cr∕Pt Ohmic contacts to B12As2
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Cr∕Pt 与 B12As2 的欧姆接触
DOI：
10.1063/1.2001760
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发表时间：
2005
影响因子：
4
通讯作者：
J. Edgar
中科院分区：
文献类型：
--
作者：
S. H. Wang;E. M. Lysczek;Bangzhi Liu;S. Mohney;Z. Xu;R. Nagarajan;J. Edgar
研究了钯、铂和Cr∕Pt与宽带隙二十面体硼化物半导体B12As2的接触。所有的Pd和Pt触点都表现出非线性的I - V特性，而Cr∕Pt触点则表现出欧姆特性。在750°C氩气中退火30秒后，Cr / Pt触点的比接触电阻从沉积时的6Ωcm2降低到3×10 - 4Ωcm2。无论在金属化之前还是之后进行退火，在600°C或更高温度下退火都能显著降低半导体片电阻。这种半导体的明显活化可能是退火改善欧姆接触的原因。
Palladium, Pt, and Cr∕Pt contacts to the wide band gap icosahedral boride semiconductor B12As2 have been studied. All Pd and Pt contacts exhibited nonlinear I‐V characteristics, while Cr∕Pt contacts were Ohmic. The specific contact resistance was reduced from 6Ωcm2 as-deposited to 3×10−4Ωcm2 after the Cr∕Pt contacts were annealed at 750°C for 30s in Ar. Annealing at 600°C or higher drastically reduced the semiconductor sheet resistance, whether annealing was performed before or after metallization. This apparent activation of the semiconductor is a likely cause for the improvement in the Ohmic contacts with annealing.