Significant Structural Distortion in the Surface Region of 4H-SiC Induced by Thermal Oxidation and Recovered by Ar Annealing
Significant Structural Distortion in the Surface Region of 4H-SiC Induced by Thermal Oxidation and Recovered by Ar Annealing
复制标题
热氧化引起的 4H-SiC 表面区域显着的结构畸变并通过 Ar 退火恢复
DOI：
10.1149/08612.0063ecst
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Hatmanto Adhi Dwi
中科院分区：
文献类型：
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作者：
Kita Koji;Hatmanto Adhi Dwi
用面内X射线衍射仪研究了O2-氧化和Ar-退火工艺对热氧化4H-SiC(0001)表面局部晶格畸变的影响。表面氧化导致晶格常数显著增加，而Ar-退火导致晶格常数逐渐松弛。从观察到的晶格常数随X射线穿透深度的变化来看，晶格常数的反常变化只发生在碳化硅衬底的表面区。
The impacts of O2-oxidation and Ar-annealing processes on the local lattice distortion at surface of thermally-oxidized 4H-SiC (0001) were investigated by using in-plane XRD. The surface oxidation induces a significant increase of the lattice constant, whereas Ar-annealing results in a gradual relaxation of it. From the x-ray penetration depth dependence of the observed lattice constant, those anomalous changes of lattice constants occur only in the surface region of SiC substrate.