SELF-LIMITING OXIDATION OF SI NANOWIRES
SELF-LIMITING OXIDATION OF SI NANOWIRES
复制标题
DOI：
10.1116/1.586661
复制
发表时间：
1993-11-01
影响因子：
1.4
通讯作者：
PEASE, RFW
中科院分区：
文献类型：
--
作者：
LIU, HI;BIEGELSEN, DK;PEASE, RFW
对于亚10 nm结构，实现1 nm量级的公差对于此类结构的受控实验来说既具有挑战性又是必要的。这里，使用自限制氧化反应来产生直径小于10 nm的硅（Si）线，其公差为+/-1 nm超过0.5 μ m。最终的自限直径被发现是由氧化温度控制。对于30 nm的初始Si柱直径，渐近直径被认为是11和6 nm的干氧化在800和850 ℃，分别。自限性反应的机制尚未完全了解，但微小的曲率半径显然是一个因素。此外，似乎有一个异常的Si损失，这可能是由于升华的SiO。
Achieving tolerances of the order of 1 nm for sub-10 nm structures is both challenging and necessary for controlled experiments on such structures. Here the use of a self-limiting oxidation reaction to yield silicon (Si) wires of less than 10 nm diam with a tolerance of +/- 1 nm over 0.5 mum. The final self-limiting diameters were found to be controlled by oxidation temperature. For 30 nm initial Si column diameters, the asymptotic diameters were found to be 11 and 6 nm for dry oxidation at 800 and 850-degrees-C, respectively. The mechanism of the self-limiting reaction is not yet fully understood but the tiny radius of curvature is obviously a factor. In addition, there appears to be an anomalous loss of Si; this may be due to sublimation of SiO.