Research on the properties of ZnO thin films deposited by using filtered cathodic arc plasma technique on glass substrate under different flow rate of O2
Research on the properties of ZnO thin films deposited by using filtered cathodic arc plasma technique on glass substrate under different flow rate of O2
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DOI：
10.1016/j.apsusc.2006.08.048
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发表时间：
2007-02
影响因子：
6.7
通讯作者：
Canghao Li;Xiaoli Li;P. Yan;E. M. Chong;Yang Liu;G. Yue;X. Y. Fan
中科院分区：
文献类型：
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作者：
Canghao Li;Xiaoli Li;P. Yan;E. M. Chong;Yang Liu;G. Yue;X. Y. Fan
采用过滤阴极弧等离子体（FCAP）技术，在200°C的温度下，以1.0、3.0、5.0、7.0、9.0和10.0sccm的氧气流量在玻璃衬底上沉积ZnO薄膜。沉积过程仅在纯氧气氛中进行。所生长的薄膜具有多晶六角纤锌矿结构。X射线衍射（XRD）结果表明，随着氧气流量的增加，样品的结晶度先增大后减小。薄膜中均存在拉应力。场发射扫描电子显微镜（FESEM）观察到平均粒径为13nm的小晶粒。薄膜的电阻率值非常低，从5.42×10−3Ωcm到4.0×10−2Ωcm。根据室温光致发光谱的测量结果，发光带也依赖于氧的供应。
ZnO thin film has been deposited on the glass substrate at a temperature of 200°C using the filtered cathodic arc plasma (FCAP) technique with the oxygen flow rate of 1.0, 3.0, 5.0, 7.0, 9.0 and 10.0sccm. The deposition processes are only held in pure oxygen atmosphere. The as-grown films exhibit a polycrystalline hexagonal wurtzite structure. With the oxygen flow rate increase, the crystallinity of the samples first increases and then decreases as measured by X-ray diffractometry (XRD). And the tensile stress exists in all the as-grown thin films. The small grain with a mean diameter of 13nm is observed by the field emission scanning electron microscopy (FESEM). The electrical resistivity values of the thin films are very low ranging from 5.42×10−3Ωcm to 4.0×10−2Ωcm. According to the result from room temperature photoluminescence spectra measurement, the luminescent bands also depend on the oxygen supply.