Shallow Si donor in ion-implanted homoepitaxial AlN
Shallow Si donor in ion-implanted homoepitaxial AlN
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DOI：
10.1063/1.5144080
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发表时间：
2020-04-27
影响因子：
4
通讯作者：
Sitar, Zlatko
中科院分区：
文献类型：
--
作者：
Breckenridge, M. Hayden;Guo, Qiang;Sitar, Zlatko
We demonstrate Si as a shallow donor in aluminum nitride (AlN) with an ionization energy of similar to 70meV. The shallow state was achieved by ion implantation of Si into homoepitaxial AlN and a low thermal budget damage recovery and activation process. These results demonstrate that the DX formation may be a kinetically limited process, though being a non-equilibrium process, preventing the Si donor from relaxing to the deep donor state. The room temperature conductivity was measured to be similar to 0.05 Omega (-1) cm(-1), which is one order of magnitude higher than what has been reported for the epitaxially doped or implanted AlN.
