Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer
复制标题
利用TaON/LaON双钝化中间层改善Ge MOS电容器的界面和电学性能
DOI：
10.1063/1.4958837
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发表时间：
2016-07-11
影响因子：
4
通讯作者：
Tang, W. M.
中科院分区：
文献类型：
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作者：
Cheng, Z. X.;Xu, J. P.;Tang, W. M.
研究了TaON/拉翁双钝化中间层对HfO 2栅介质Ge金属氧化物半导体（MOS）电容器的界面和电学性能的影响。与仅用拉翁作为钝化中间层的对应物相比，由于TaON阻挡层对Hf扩散的强阻挡作用，将降低界面质量的HfGeOx和LaHfOx的形成被有效地抑制。结果，具有TaON/拉翁双钝化中间层的Ge MOS器件获得了优异的界面和电学性能：高k值（20.9），低界面态密度（5.32 × 1011 cm−2 eV−1）和氧化物电荷密度（-3.90 × 1012 cm-2）、低栅极漏电流密度（1.77 × 10 - 4 A/cm 2，Vg = Vfb + 1 V）以及高场应力下的高可靠性。
The effects of TaON/LaON dual passivation interlayer on the interfacial and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitor with HfO2 gate dielectric are investigated. As compared to its counterpart with only LaON as passivation interlayer, the formation of HfGeOx and LaHfOx, which would degrade the interfacial quality, is effectively suppressed due to the strong blocking role of the TaON barrier layer against Hf diffusion. As a result, excellent interfacial and electrical properties are achieved for the Ge MOS device with the TaON/LaON dual passivation interlayer: high k value (20.9), low interface-state density (5.32 × 1011 cm−2 eV−1) and oxide-charge density (−3.90 × 1012 cm−2), low gate leakage current density (1.77 × 10−4 A/cm2 at Vg = Vfb + 1 V), and high reliability under high-field stress.