Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots
Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots
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DOI：
10.1103/physrevb.87.085315
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发表时间：
2013-02-22
影响因子：
3.7
通讯作者：
Urbaszek, B.
中科院分区：
文献类型：
--
作者：
Durnev, M. V.;Glazov, M. M.;Urbaszek, B.
本文提出了在（111）A富Ga表面上生长的GaAs液滴点中磁场诱导重空穴态+/-3/2混合的微观理论。所提出的理论模型考虑了原子力显微镜中揭示的三角对称的引人注目的点形状。我们的空穴态的计算进行内的Luttinger哈密顿形式主义，补充津贴的三角形的限制潜力。它们是在定量协议与实验观察到的极化选择规则，发射线强度和能量分裂的纵向和横向磁场中性和带电激子在所有测量的单点。DOI：10.1103/PhysRevB.87.085315
We present a microscopic theory of the magnetic field induced mixing of heavy-hole states +/- 3/2 in GaAs droplet dots grown on (111) A Ga-rich surfaces. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowance for the triangularity of the confining potential. They are in quantitative agreement with the experimentally observed polarization selection rules, emission line intensities and energy splittings in both longitudinal and transverse magnetic fields for neutral and charged excitons in all measured single dots. DOI: 10.1103/PhysRevB.87.085315