Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis
Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis
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DOI：
10.1063/1.2135876
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发表时间：
2005-11
影响因子：
4
通讯作者：
S. O’Leary;B. Foutz;M. Shur;L. Eastman
中科院分区：
文献类型：
--
作者：
S. O’Leary;B. Foutz;M. Shur;L. Eastman
最近对大块纤锌矿 InN 进行的实验表明，该材料的能隙、最低能谷中电子的有效质量以及最低能谷的非抛物线系数并不像最初认为的那样。使用半经典三谷蒙特卡罗模拟方法，我们使用一组修订的材料参数分析了块体纤锌矿 InN 中发生的稳态和瞬态电子传输，这组修订的参数考虑了最近观察到的现象学。我们发现峰值电子漂移速度比之前发现的要大得多。还发现这组修改后的参数对瞬态电子传输的影响是显着的。
Recent experimentation, performed on bulk wurtzite InN, suggests that the energy gap, the effective mass of the electrons in the lowest-energy valley, and the nonparabolicity coefficient of the lowest-energy valley are not as originally believed for this material. Using a semiclassical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk wurtzite InN using a revised set of material parameters, this revised set of parameters taking into account this recently observed phenomenology. We find that the peak electron drift velocity is considerably greater than that found previously. The impact that this revised set of parameters has upon the transient electron transport is also found to be significant.