Porous silicon bulk micromachining for thermally isolated membrane formation
Porous silicon bulk micromachining for thermally isolated membrane formation
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DOI：
10.1016/s0924-4247(97)01384-8
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发表时间：
1997-05-01
影响因子：
4.6
通讯作者：
vandenBerg, A
中科院分区：
文献类型：
--
作者：
Ducso, C;Vazsonyi, E;vandenBerg, A
提出了一种制备热隔离硅膜的低热收支新技术。在p型硅片中选择性形成多孔硅导致在植入的n型硅区域下方形成凹边轮廓。牺牲的多孔层随后在稀KOH溶液中除去，非化学计量LPCVD氮化物层组合形成单晶硅膜的悬浮液。该技术消除了外延衬底和背面对准的需要，并证明了以最小功耗实现集成气体传感器的高温微热板是非常有效的。
A novel low thermal budget technique is proposed for the preparation of thermally isolated silicon membranes. The selective formation of porous silicon in a p-type silicon wafer results in an undercut profile below the implanted n-type silicon regions. The sacrificial porous layer is subsequently removed in a dilute KOH solution, A non stoichiometric LPCVD nitride layer combination forms the suspension of the single crystalline silicon membranes. This technique eliminates the need for epitaxial substrates and backside alignment, and proves to be very efficient in the realization of a high-temperature micro-hotplate operating with minimum power consumption for the purpose of integrated gas sensors.