Current self-amplification effect of graphene-based transistor in high-field transport
Current self-amplification effect of graphene-based transistor in high-field transport
复制标题
石墨烯基晶体管在高场输运中的电流自放大效应
DOI：
10.1016/j.carbon.2014.06.025
复制
发表时间：
2014-10-01
期刊：
影响因子：
10.9
通讯作者：
Chang, Shengli
中科院分区：
文献类型：
--
作者：
Chen, Wei;Qin, Shiqiao;Chang, Shengli
石墨烯作为一种具有对称导价带的单原子层碳材料，在高电场作用下表现出许多有趣的效应。本文报道了在高场输运中石墨烯晶体管中电流的自放大效应。即使在固定偏置和零栅极电压下，石墨烯晶体管中的电流也会随着时间的推移而增加，最终达到石墨烯的击穿阈值。电流的自放大伴随着石墨烯p掺杂的增强，这表明这种效应是由于焦耳加热导致电子从石墨烯中逸出引起的。(C) 2014 Elsevier Ltd.版权所有。
As a one-atomic-layer carbon material with the symmetrical conduction and valence bands, graphene shows a lot of interesting effects under high electric field. Here, we report an observation of self-amplification effect of current in graphene transistors in high-field transport. The current in graphene transistors could increase with time and finally reaches up to the breakdown threshold of graphene, even under the fixed bias and zero gate voltages. The current self-amplification is accompanied by the enhancement of the graphene p-doping, which demonstrates that this effect arises from the electrons escaping from graphene due to joule heating. (C) 2014 Elsevier Ltd. All rights reserved.