Mercury Chalcogenide Nanoplatelet–Quantum Dot Heterostructures as a New Class of Continuously Tunable Bright Shortwave Infrared Emitters
Mercury Chalcogenide Nanoplatelet–Quantum Dot Heterostructures as a New Class of Continuously Tunable Bright Shortwave Infrared Emitters
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汞硫族化物纳米片——量子点异质结构作为新型连续可调明亮短波红外发射器
DOI:
10.1021/acs.jpclett.0c00958
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发表时间:
2020
期刊:
影响因子:
--
通讯作者:
Caram, Justin R.
中科院分区:
文献类型:
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作者:
Tenney, Stephanie M.;Vilchez, Victoria;Sonnleitner, Mikayla L.;Huang, Chengye;Friedman, Hannah C.;Shin, Ashley J.;Atallah, Timothy L.;Deshmukh, Arundhati P.;Ithurria, Sandrine;Caram, Justin R.
Despite broad applications in imaging, energy conversion, and telecommunications, few nanoscale moieties emit light efficiently in the shortwave infrared (SWIR, 1000–2000 nm or 1.24–0.62 eV). We report quantum-confined mercury chalcogenide (HgX, where X = Se or Te) nanoplatelets (NPLs) can be induced to emit bright (QY > 30%) and tunable (900–1500+ nm) infrared emission from attached quantum dot (QD) “defect” states. We demonstrate near unity energy transfer from NPL to these QDs, which completely quench NPL emission and emit with a high QY through the SWIR. This QD defect emission is kinetically tunable, enabling controlled midgap emission from NPLs. Spectrally resolved photoluminescence demonstrates energy-dependent lifetimes, with radiative rates 10–20 times faster than those of their PbX analogues in the same spectral window. Coupled with their high quantum yield, midgap emission HgX dots on HgX NPLs provide a potential platform for novel optoelectronics in the SWIR.