Control of the Size and Position of Silicon Nanowires Grown via the Vapor-Liquid-Solid Technique
Control of the Size and Position of Silicon Nanowires Grown via the Vapor-Liquid-Solid Technique
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通过气-液-固技术生长的硅纳米线的尺寸和位置的控制
DOI：
10.1143/jjap.36.6204
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发表时间：
1997
影响因子：
1.5
通讯作者：
Setsuo Usui Setsuo Usui
中科院分区：
文献类型：
--
作者：
J. Westwater;Dharam Pal Gosain Dharam Pal Gosain;Setsuo Usui Setsuo Usui
利用高温下Au在Si和SiO2表面的冷凝系数的差异，可以控制气-液-固（VLS）生长的Si纳米线的直径和位置。对于在520-700° C的温度范围内的低Au通量，Au凝聚对Si是完全选择性的。通过热氧化的Si（111）晶片的表面氧化物层蚀刻孔以暴露Si。当Au然后蒸发到表面上时，Au原子选择性地凝聚在孔中并形成液体Au/Si合金球。如果孔包含通过蚀刻形成的小Si岛突起，则其充当合金成核中心，并且合金可以聚集以形成单个球，其直径由孔的直径和Au的总剂量确定。当硅烷气体然后被引入到室中作为VLS反应中的Si源气体时，每个合金球生长以形成具有受控直径和位置的Si线。
The diameter and position of vapor-liquid-solid (VLS) grown Si nanowires can be controlled by exploiting the difference in Au condensation coefficient on Si and SiO2 surfaces at elevated temperature. For low Au fluxes in the temperature range 520–700° C, Au condensation is completely selective to Si. Holes are etched through the surface oxide layer of a thermally oxidized Si(111) wafer to expose the Si. When Au is then evaporated onto the surface, the Au atoms condense selectively in the holes and form liquid Au/Si alloy balls. If the holes contain a small Si island protrusion formed by etching this acts as an alloy nucleation center and the alloy can agglomerate to form a single ball, the diameter of which is determined by the diameter of the hole and the total dose of Au. When silane gas is then introduced into the chamber as the Si source gas in the VLS reaction each alloy ball grows to form a Si wire of controlled diameter and position.