Ambient temperature diodes and field‐effect transistors in InSb/In1−xAlxSb
Ambient temperature diodes and field‐effect transistors in InSb/In1−xAlxSb
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InSb/In1−xAlxSb 中的环境温度二极管和场效应晶体管
DOI：
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发表时间：
1991
期刊：
影响因子：
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通讯作者：
C. Whitehouse
中科院分区：
文献类型：
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作者：
T. Ashley;A. B. Dean;C. T. Elliott;C. McConville;G. Pryce;C. Whitehouse
InSb和相关的窄禁带合金除了传统的红外探测之外，还有许多潜在的应用，前提是可以实现环境温度操作。我们报告了利用少数载流子排斥和提取的多层InSb/In 1 −xAlxSb结构的实验结果。在室温下，二极管具有比同质结构InSb器件高几个数量级的R 0A值。在反向偏压下观察到与俄歇抑制相关的负微分电阻。增强型金属-绝缘体-半导体场效应晶体管在294 K下具有接近经典的输出特性，典型的峰值电流为34 mS/mm，动态范围为23 dB。
InSb and related narrow‐gap alloys have many potential applications in addition to the conventional one of infrared detection, provided that ambient temperature operation can be achieved. We report experimental results on multilayer InSb/In1−xAlxSb structures utilizing minority‐carrier exclusion and extraction. At room temperature, diodes have R0A values several orders higher than homostructure InSb devices. Negative differential resistance associated with Auger suppression is observed under reverse bias. Enhancement‐mode metal‐insulator‐semiconductor field‐effect transistors have near classical output characteristics at 294 K, with a typical transconductance of 34 mS/mm and dynamic range of 23 dB.