Selective Growth of Carbon Nanotubes using Two-step Etch Scheme for Semiconductor Via Interconnects
Selective Growth of Carbon Nanotubes using Two-step Etch Scheme for Semiconductor Via Interconnects
复制标题
使用半导体通孔互连的两步蚀刻方案选择性生长碳纳米管
DOI：
10.5370/jeet.2011.6.2.280
复制
发表时间：
2011
影响因子：
1.9
通讯作者：
Sang
中科院分区：
文献类型：
--
作者：
Sunwoo Lee;Sang
In the present work, a new approach is proposed for via interconnects of semiconductor de- vices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In or- der to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried cata- lyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the cata- lyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.
影响因子：
2.7
作者：
Salvetat, JP;Bonard, JM;Zuppiroli, L
通讯作者：
Zuppiroli, L