Electronic and optoelectronic properties of zinc phthalocyanine single-crystal nanobelt transistors
Electronic and optoelectronic properties of zinc phthalocyanine single-crystal nanobelt transistors
复制标题
锌酞菁单晶纳米带晶体管的电子和光电性能
DOI：
10.1016/j.orgel.2015.12.019
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发表时间：
2016-03-01
影响因子：
3.2
通讯作者：
Liu, Yichun
中科院分区：
文献类型：
--
作者：
Gou, He;Wang, Guorui;Liu, Yichun
ZnPc single-crystal nanobelts were grown by a physical vapor transport process with the length ranging from 20 to 150 mm and the width ranging from several tens of nanometers to several micrometers. Based on high crystalline ZnPc nanobelts, its single-crystal nanobelt transistors were realized. The field-effect mobility is as high as 0.75 cm(2)V(-1)s(-1) with OTS modified SiO2 as dielectric, which is the highest value for the reported ZnPc devices. In addition, ZnPc nanobelt transistors show the excellently photosensitive properties with the high photoswitching ratio (vertical bar I-light/I-dark vertical bar) of 7.34 x 10(3) and the high photoresponsivity at 1.57 x 10(4) AW(-1). These results indicate the future potential of ZnPc single-crystal transistors in organic electronic and optoelectronic applications. (C) 2015 Elsevier B.V. All rights reserved.
