Tailoring nonlinear optical properties of Bi2Se3 through ion irradiation.
Tailoring nonlinear optical properties of Bi2Se3 through ion irradiation.
复制标题
通过离子辐照定制 Bi2Se3 的非线性光学特性
DOI：
10.1038/srep21799
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发表时间：
2016-02-18
影响因子：
4.6
通讯作者：
Chen F
中科院分区：
文献类型：
--
作者：
Tan Y;Guo Z;Shang Z;Liu F;Böttger R;Zhou S;Shao J;Yu X;Zhang H;Chen F
通过离子辐照有意引入缺陷，发现了拓扑绝缘体硒化铋（Bi2Se3）的非线性光学特性。光调制深度的增加很大程度上取决于辐照条件的选择。采用离子辐照Bi2Se3薄膜作为调q波导激光器的光饱和吸收器件，提高了激光器的脉冲持续时间和峰值功率。我们的工作提供了一种通过离子辐照来定制材料非线性光学特性的新方法，这是一种成熟的芯片技术，可以在石墨烯，二硫化钼，黑磷等拓扑绝缘体之外的其他层状二维材料中找到更广泛的适用性。
The nonlinear optical property of topological insulator bismuth selenide (Bi2Se3) is found to be well-tailored through ion irradiation by intentionally introducing defects. The increase of the optical modulation depth sensitively depends on the careful selection of the irradiation condition. By implementing the ion irradiated Bi2Se3 film as an optical saturable absorber device for the Q-switched wave-guide laser, an enhanced laser performance has been obtained including narrower pulse duration and higher peak power. Our work provides a new approach of tailoring the nonlinear optical properties of materials through ion irradiation, a well-developed chip-technology, which could find wider applicability to other layered two-dimensional materials beyond topological insulators, such as graphene, MoS2, black phosphours etc.