Electrostriction in gallium nitride
Electrostriction in gallium nitride
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DOI：
10.1063/1.125414
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发表时间：
1999-11
影响因子：
4
通讯作者：
I. Guy;S. Muensit;E. Goldys
中科院分区：
文献类型：
--
作者：
I. Guy;S. Muensit;E. Goldys
测量了化合物半导体氮化镓的机电效应。的机电响应被发现包括一个显着的贡献，从电致伸缩。GaN的多晶样品中的电致伸缩系数M33的测量值为（1.2±0.1）×10−18 m2 V−2。这一发现可能对使用这种材料的应变层的器件具有重要意义。
Electromechanical effects in the compound semiconductor gallium nitride have been measured. The electromechanical response is found to include a significant contribution from electrostriction. The measured value of the electrostrictive coefficient M33 in a polycrystalline sample of GaN is (1.2±0.1)×10−18 m2 V−2. This finding may have significance for devices using strained layers of this material.