Anomalous Hall effect in ferromagnetic semiconductors
Anomalous Hall effect in ferromagnetic semiconductors
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DOI：
10.1103/physrevlett.88.207208
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发表时间：
2002-05-20
影响因子：
8.6
通讯作者：
MacDonald, AH
中科院分区：
文献类型：
--
作者：
Jungwirth, T;Niu, Q;MacDonald, AH
本文提出了铁磁（III，Mn）V半导体中反常霍尔效应的理论。我们的理论涉及到一个均匀的铁磁体的异常霍尔电导的Berry相位获得的准粒子波函数在穿越封闭的路径上的自旋分裂费米表面。我们的理论和实验数据之间的定量协议在（In，Mn）As和（Ga，Mn）As系统表明，这种无序独立的贡献异常霍尔电导率占主导地位的稀磁半导体。这个模型的成功（III，Mn）V材料是前所未有的长期努力，以了解巡游铁磁体中的异常霍尔效应的起源。
We present a theory of the anomalous Hall effect in ferromagnetic (III, Mn)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wave function upon traversing closed paths on the spin-split Fermi surface. The quantitative agreement between our theory and experimental data in both (In, Mn)As and (Ga, Mn)As systems suggests that this disorder independent contribution to the anomalous Hall conductivity dominates in diluted magnetic semiconductors. The success of this model for (III, Mn)V materials is unprecedented in the longstanding effort to understand origins of the anomalous Hall effect in itinerant ferromagnets.